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| EIC1414-2 UPDATED 08/20/2007 14.00-14.50GHz 2-Watt Internally-Matched Power FET FEATURES * * * * * * * 14.00 -14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -42 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ 550mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ 550mA Gain Flatness f = 14.00-14.50GHz VDS = 10 V, IDSQ 550mA Power Added Efficiency at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ 550mA Drain Current at 1dB Compression f = 14.00-14.50GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 14.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 32.5 5.5 TYP 33.5 6.5 0.6 30 600 -38 -42 1040 -2.5 11 1440 -4.0 12 o MAX UNITS dBm dB dB % 700 mA dBc mA V C/W VDS = 3 V, IDS = 10 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFD SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 24mA -4.8mA 33.0dBm 175C -65C to +175C 12.5W CONTINUOUS2 10V -4V 7.2mA -1.2mA @ 3dB Compression 175C -65C to +175C 12.5W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised October 2007 EIC1414-2 UPDATED 08/20/2007 14.00-14.50GHz 2-Watt Internally-Matched Power FET PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC1414-2 (Hermetic) EIC1414-2NH (Non-Hermetic) Excelics EIC1414-2 Excelics EIC1414-2NH YYWW SN YYWW SN ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number EIC1414-2 EIC1414-2NH Notes: Packages Hermetic Non-Hermetic Grade1 Industrial Industrial fTest (GHz) 14.00-14.50GHz 14.00-14.50GHz P1dB (min) 32.5 32.5 IM3 (min)2 -38 -38 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised October 2007 |
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